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| Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOSTM3 Power-Transistor Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance RDS(on) * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to IEC61249-2-21 Type IPB029N06N3 G IPI032N06N3 G Product Summary V DS R DS(on),max (SMD) ID 60 2.9 120 V m A IPP032N06N3 G Package Marking PG-TO263-3 029N06N PG-TO262-3 032N06N PG-TO220-3 032N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 120 120 480 235 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=100 A, R GS=25 mJ V W C T C=25 C 188 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 188 A. See figure 3 for more detailed information See figure 13 for more detailed information Rev. 2.2 page 1 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm cooling area 5) 0.8 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=118 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=10 V, I D=100 A, (SMD) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 60 2 3 0.1 4 2 A V 75 20 1 2.6 2.3 1.3 149 200 100 3.2 2.9 S nA m 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Rev. 2.2 page 2 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=120 A, R G=3.5 V GS=0 V, V DS=30 V, f =1 MHz - 10000 2200 73 35 120 62 20 13000 pF 2900 ns Q gs Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=100 A, V GS=0 to 10 V - 53 11 33 124 5.2 100 165 134 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C VR=30 V, IF=120A, diF/dt=100 A/s - 1.0 59 82 120 480 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 200 140 120 150 100 P tot [W] 80 100 I D [A] 60 40 20 0 0 50 100 150 200 0 50 100 150 200 50 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 102 100 s 0.2 Z thJC [K/W] I D [A] 10-1 0.1 0.05 0.02 0.01 1 ms 101 10 ms single pulse DC 100 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.2 page 4 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 480 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 8 5V 5.5 V 6V 10 V 7V 400 6 320 R DS(on) [m] I D [A] 240 6V 4 7V 160 5.5 V 10 V 2 80 5V 4.5 V 0 0 1 2 3 4 5 0 0 80 160 240 320 400 480 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 400 8 Typ. forward transconductance g fs=f(I D); T j=25 C 280 350 240 300 200 250 200 g fs [S] 175 C 25 C I D [A] 160 120 150 80 100 50 40 0 0 2 4 6 0 0 50 100 150 200 250 300 V GS [V] I D [A] Rev. 2.2 page 5 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 6 4 3.5 5 3 4 max 118 A 1180 A R DS(on) [m] 2.5 3 V GS(th) [V] 100 140 180 typ 2 1.5 2 1 1 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 Ciss 175 C, max 25 C 175 C 104 Coss 102 C [pF] 103 I F [A] 25 C, max 101 102 Crss 101 0 20 40 60 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.2 page 6 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 103 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 12 30 V 10 12 V 48 V 102 8 V GS [V] 1000 I AS [A] 6 150 C 100 C 25 C 101 4 2 100 1 10 100 0 0 50 100 150 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS Qg 65 V BR(DSS) [V] 60 V g s(th) 55 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 50 T j [C] Rev. 2.2 page 7 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO220-3 Rev. 2.2 page 8 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO262-3 (I-Pak) Rev. 2.2 page 9 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO263 (D-Pak) Rev. 2.2 page 10 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-12-11 |
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